RIR Power Electronics launches advanced SiC Merged-PiN Schottky (MPS) diodes for high-efficiency power systems

RIR Power Electronics Ltd announced the launch of its silicon carbide (SiC)-merged-PiN Schottky (MPS) diodes, marking a significant advancement in power device technology for next-generation electric vehicles (EVs), industrial power systems, and energy infrastructure.

Within the SiC diode family, MPS diodes represent a critical evolution beyond conventional SiC Schottky Barrier Diodes (SBDs). By integrating Schottky and PiN structures into a single, monolithic device, SiC MPS diodes overcome long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering superior real-world performance.

Powering the next phase of global electrification
The accelerating electrification of transportation, renewable energy, data centres, and industrial infrastructure is driving demand for power semiconductors that deliver higher efficiency, power density, and long-term reliability. SiC technology has emerged as a cornerstone of this transition, enabling higher operating voltages, faster switching speeds, and improved thermal performance compared to traditional silicon devices.

Key advantages of SiC MPS diodes
* High surge current capability: Enhanced tolerance to inrush currents, short circuits, and grid disturbances.
* Low leakage at elevated temperatures: Stable performance under high-temperature operation.
* Improved avalanche and blocking robustness: Reliable operation in high-voltage DC-link and grid-tied systems.
* Near-zero reverse recovery: Ultra-fast switching with minimal losses.
* Higher system reliability: Reduced need for over-design, snubbers, and excessive derating.

Enabling high-impact applications
RIR’s SiC MPS diodes are designed for demanding applications including electric vehicles (EVs & HEVs), data centres and AI infrastructure, renewable energy and grid systems, industrial drives, aerospace and defence, and green hydrogen and electrolysis systems, where efficiency, ruggedness, and thermal performance are mission critical.  

The launch reinforces RIR’s vision of combining deep semiconductor expertise with next-generation materials to power the global energy transition.

Emphasizing the company’s commitment to innovation, Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics, said: “With our new 1200V SiC MPS diodes, RIR is making high-performance Silicon Carbide more accessible, reliable, and deployment-ready, Backed by decades of high-power semiconductor expertise, we are enabling designers worldwide to harness the full potential of SiC confidently and efficiently across the most demanding applications, including EVs, data centres, renewables, industrial systems, aerospace, and green hydrogen.”

RIR brings over 55 years of high-power semiconductor expertise to its SiC portfolio and is uniquely positioned as India’s only player with existing high-power semiconductor fabrication capability, with proven experience in devices rated up to 20,000V and 12,000A.

Supported by global development operations in the U.S., and its forthcoming first-of-its-kind SiC manufacturing campus in Odisha, India, RIR is building a vertically integrated SiC ecosystem spanning device design, wafer processing, packaging, and application support, enabling the delivery of high-voltage, high-reliability SiC MOSFETs and diodes optimized for electrical performance, manufacturability, and long-term system reliability.