onsemi and Innoscience collaborate to speed global rollout of GaN power portfolio

onsemi and Innoscience announced the signing of MoU to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40-200V, and significantly broaden customer adoption.

The collaboration outlined in the MoU brings together onsemi’s leadership in integrated systems and packaging with Innoscience’s proven GaN technology and high-volume manufacturing to enable delivery of cost-effective, highly efficient GaN products for industrial, automotive, telecom infrastructure, consumer and AI data center markets.

GaN semiconductor devices offer higher switching speeds, smaller form factors, and lower energy losses to deliver more power in less space. Until now, limited offerings and manufacturing capacity have slowed GaN adoption in the low and medium-voltage segment. Through this collaboration, onsemi and Innoscience will seek to overcome these barriers to quickly bring high-volume, worldwide deployment of optimized GaN solutions for mainstream markets:

Industrial: Motor drives for robotics, solar microinverters, and optimizers
Automotive: DC-DC converters, synchronous rectification
Telecom Infrastructure: DC-DC and point-of-load converters
Consumer and Mass Market: Power supplies, adaptors, DC-DC converters, motor drives, audio, light e-mobility, power tools, robotics
AI Data Center: Intermediate bus converters, DC-DC converters, battery backup units.

For onsemi customers, the collaboration with Innoscience would enable:

Faster Time to Market: Rapid prototyping, accelerated design-in, and swift entry into mainstream markets with onsemi's system expertise and Innoscience’s proven GaN technology and manufacturing
Scalable Manufacturing: True mass-market scalability to handle large-volume ramps, leveraging onsemi's global integration and packaging experience and Innoscience’s established GaN capacity
Lower System Cost: Optimized package, fewer components and simplified thermal management deliver more compact designs and lower total system cost

Antoine Jalabert, VP of Corporate Strategy, onsemi, noted: “As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials. Until now, in the low and medium voltage segments, cost and supply constraints have limited its widespread adoption. Through a collaboration with Innoscience, we expect to be able to access the industry’s largest GaN production footprint and quickly scale our GaN offerings for customers worldwide to enable broader adoption in mainstream power applications."

Yi Sun, Senior VP, Product & Engineering, said: “GaN technology is essential to improving electronics, creating smaller, more efficient power systems, saving electric power, and reducing CO2 emissions. Innoscience is excited to explore a strategic collaboration opportunity with onsemi, to expand and accelerate the adoption of GaN power worldwide, and to create a system integration platform with onsemi’s broad portfolio.” 

Intelligent power portfolio
GaN is projected to capture an estimated $2.9 billion, or 11% share, of the global power semiconductor market by 2030, with a projected compound annual growth rate from 2024-2030 of 42%1. This collaboration with Innoscience would build on onsemi’s comprehensive intelligent power portfolio, which now spans silicon, silicon carbide (SiC), and GaN technologies.

Together, these technologies enable onsemi to deliver the optimal power system for application across AI data center, automotive, industrial, and consumer. This complete low and medium voltage portfolio strengthens onsemi’s position as a leading provider of fully integrated power systems to help customers maximize performance and energy efficiency as global electrification and AI-energy demand continues to surge.

onsemi expects to begin sampling in the first half of 2026.