Nanya Tech and Etron form NT$500M JV to develop custom HBM for edge AI

According to TechNews, Taiwan’s leading DRAM maker Nanya Technology and IC design firm Etron Technology jointly announced the establishment of a new joint venture focused on AI memory design services. Nanya and Etron will invest NTD 500 million in the venture, with an 80:20 ownership split. The company will be headquartered in Hsinchu City, Taiwan.

Nanya Technology stated that the new venture aims to address the rapid growth of the AI edge computing market. By combining the resources of both companies, the joint entity will offer high-value, high-performance, and low-power custom ultra-high-bandwidth memory solutions to support diverse edge AI applications.

The report highlights that Nanya plans to launch new HBM products with its partners by the end of 2026, targeting applications such as AI PCs, smartphones, robotics, and automotive systems.

Nanya’s interest in HBM development is not new. Earlier this year, President Pei-Ing Lee stated that the company does not plan to compete in the HBM3 or HBM3E markets dominated by major players, nor to re-enter the HBM2 segment. Instead, its focus is on customized HBM solutions for edge AI. Lee explained that as AI shifts from the cloud to edge devices, demand for tailored HBM is increasing, according to the report.

In December 2024, Nanya announced an investment of up to NTD 660 million in its subsidiary PieceMakers Technology to integrate customized DRAM design and jointly develop tailored HBM products. The report also notes that Nanya is working with packaging and testing partner Formosa Advanced Technologies to establish 3D Through-Silicon Via (TSV) processes and multi-chip stacking capabilities, further advancing its push into the HBM market.

Source: TrendForce, Taiwan.